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Ferroelectricity in Doped Hafnium Oxide: Materials

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO 2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials.

Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System

Aug 22, 2017· Silicon doped hafnium oxide was the material used in the original report of ferroelectricity in hafnia in 2011. Since then, it has been subject of many further publications including the demonstration of the world's first ferroelectric field‐effect transistor in the

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(PDF) Doped Hafnium Oxide – An Enabler for Ferroelectric

The ferroelectric behaviour of silicon doped hafnium oxide has been investigated using metal–insulator– metal capacitor structures for film thicknesses of 9 and 27 nm, annealing temperatures

Ferroelectricity in Doped Hafnium Oxide 1st Edition

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications

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FERROELECTRIC DOPED HAFNIUM OXIDE AND ITS

Recently, doped hafnium oxide (HfO 2) has garnered attention with its excellent scalability, reliability, and compatibility with the current CMOS process. This thesis introduces two research projects aimed at improving the electrical properties of ferroelectric-doped HfO 2 for various device applications.

Ferroelectric aluminum-doped hafnium oxide for memory

In the last few years, doped metal oxides, including hafnium oxide (Hf02) and zirconium oxide (ZrO2), were found to have ferroelectric phase [1]-[2]. Ferroelectric HfO2 has the advantages of a high coercive field, excellent scalability (down to 2.5nm), and good compatibility with CMOS processing [3]-[7].

Author: Hojoon Ryu, Kai Xu, Ji Guo, Wenjuan Zhu

Wake-up effects in Si-doped hafnium oxide ferroelectric

Nov 05, 2013· Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO 2 film under bipolar pulsed-field operation. High field cycling causes a “wake-up” in virgin “pinched” polarization hysteresis loops, demonstrated by an enhancement in remanent

Ferroelectricity in yttrium-doped hafnium oxide: Journal

Dec 07, 2011· Structural and electrical evidence for a ferroelectric phase in yttrium doped hafnium oxide thin films is presented. A doping series ranging from 2.3 to 12.3 mol% YO 1.5 in HfO 2 was deposited by a thermal atomic layer deposition process. Grazing incidence X-ray diffraction of the 10 nm thick films revealed an orthorhombic phase close to the stability region of the cubic phase.

Ferroelectricity in Hafnium Oxide: Materials and Devices

The special topic will deal with all aspects of ferroelectricity in hafnium oxide-based materials. Topics covered include, but are not limited to: Microscopic origin of ferroelectricity in doped and undoped hafnium oxide; Properties of ferroelectric hafnium oxide; Ferroelectric capacitors using hafnium oxide;

Light Emission in Nd Doped Si-Rich HfO 2 Films Prepared by

Hafnium oxide films doped with Si and Nd atoms were produced by radio-frequency magnetron sputtering of a HfO2 target topped with calibrated Si and Nd2O3 pellets in pure argon plasma followed by an annealing in nitrogen atmosphere during tA = 15 min at different temperatures (TA = 800–1100°C). The evolution of structural, chemical and luminescent properties of the films with TA was studied

Ferroelectric Tunneling Junctions Based on Aluminum Oxide

Dec 31, 2019· Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing. Hojoon Ryu 1, Haonan Wu 1, Fubo Rao 2 &

Ferroelectric Tunneling Junctions Based on Aluminum Oxide

Recently, it was discovered that doped hafnium oxide (HfO 2) has strong ferroelectricity 19 – 28. As compared to traditional perovskites, doped HfO 2 has many advantages, including excellent scalability and full compatibility with CMOS processes 28 – 31.

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Find PDF < Neutron Detection Utilizing Gadolinium Doped

Gadolinium (Gd) doped hafnium oxide (HfO2) was deposited onto a silicon substrate using pulsed laser deposition. Synchrotron radiation was used to perform Gd L3-edge extended X-ray absorption fine structure (EXAFS) measurements on 3%, 10%, and 15% doped HfO2 samples.

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric

Feb 15, 2018· Lanthanum-doped HfO2 is a material with a broad window of process parameters. Variations of the dopant concentration lead to changes in the crystallographic structure in the bulk and at the interfaces of the film, which impacts the ferroelectric polarization, internal bias fields, and with this the field cycling behavior of the capacitor structure.

Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System

Aug 22, 2017· Silicon doped hafnium oxide was the material used in the original report of ferroelectricity in hafnia in 2011. Since then, it has been subject of many further publications including the demonstration of the world's first ferroelectric field‐effect transistor in the

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Electrical properties of yttrium-doped hafnium-zirconium

Dec 25, 2019· Ferroelectric yttrium-doped hafnium-zirconium dioxide (Y-HZO) thin films were fabricated by solution process on Pt/Ti/SiO 2/Si substrates. Both metal–ferroelectric–metal (MFM) structures with Pt top electrode and metal–ferroelectric–semiconductor (MFS) structures with indium tin oxide (ITO) top electrode were fabricated and characterized.

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

In this work, CMOS compatible aluminum doped hafnium oxide (Al: HfO2) is used as the FE material for which for α =-3× 10 9 m/F, β =6× 10 11 m 5 /C 2 F , γ = 0 [29], with corresponding

US20060176645A1 Atomic layer deposition of Dy doped HfO2

The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium oxide (HfO 2 ) doped with dysprosium (Dy) and a method of fabricating such a combination gate and dielectric layer produces a reliable structure for use in a variety of electronic devices. Forming the dielectric structure includes depositing hafnium oxide using atomic layer deposition onto a substrate surface using

An ultrathin integrated nanoelectromechanical transducer

Oct 07, 2019· A nano-mechanical resonator with 10nm hafnium-zirconium oxide ferroelectric transducer. In 2018 IEEE International Electron Devices Meeting (IEDM) 4–6 (IEEE, 2019). 22.

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric

Recently simulation groups have reported the lanthanide series elements as the dopants that have the strongest effect on the stabilization of the ferroelectric non-centrosymmetric orthorhombic phase in hafnium oxide. This finding confirms experimental results for lanthanum and gadolinium showing the highest remanent polarization values of all hafnia-based ferroelectric films until now. However

Piezoelectric Response of Polycrystalline Silicon‐Doped

Ferroelectric thin films are of great interest for a wide range of applications such as non‐volatile memory, 1 sensors, 2 energy storage, 3 neuronal networks, 4 and future RF devices. 5 Doped hafnium oxide combines sizeable spontaneous polarization, remarkable scalability from the micrometer scale 6 down to few nanometers, 7 and CMOS compatibility. Since the discovery of this prospective

Ferroelectricity In Doped Hafnium Oxide | Download eBook

Description : Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of

Hafnium Oxide Based Ferroelectric Materials — NaMLab

Hafnium Oxide Based Ferroelectric Materials Fig. 1: Remanent polarization values for ~10 nm thick Si, Al, Gd, and La doped HfO 2 films with different dopant content. During the last two years the main focus in the project was on a detailed understanding of the ferroelectric properties in thin doped HfO 2 layers.

Light Emission in Nd Doped Si-Rich HfO 2 Films Prepared by

Hafnium oxide films doped with Si and Nd atoms were produced by radio-frequency magnetron sputtering of a HfO2 target topped with calibrated Si and Nd2O3 pellets in pure argon plasma followed by an annealing in nitrogen atmosphere during tA = 15 min at different temperatures (TA = 800–1100°C). The evolution of structural, chemical and luminescent properties of the films with TA was studied

Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System

Aug 22, 2017· Silicon doped hafnium oxide was the material used in the original report of ferroelectricity in hafnia in 2011. Since then, it has been subject of many further publications including the demonstration of the world's first ferroelectric field‐effect transistor in the

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric

Feb 15, 2018· Recently simulation groups have reported the lanthanide series elements as the dopants that have the strongest effect on the stabilization of the ferroelectric non-centrosymmetric orthorhombic phase in hafnium oxide. This finding confirms experimental results for lanthanum and gadolinium showing the highest remanent polarization values of all hafnia-based ferroelectric films until now.

Piezoelectric Response of Polycrystalline Silicon‐Doped

Ferroelectric thin films are of great interest for a wide range of applications such as non‐volatile memory, 1 sensors, 2 energy storage, 3 neuronal networks, 4 and future RF devices. 5 Doped hafnium oxide combines sizeable spontaneous polarization, remarkable scalability from the micrometer scale 6 down to few nanometers, 7 and CMOS compatibility. Since the discovery of this prospective

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric

Recently simulation groups have reported the lanthanide series elements as the dopants that have the strongest effect on the stabilization of the ferroelectric non-centrosymmetric orthorhombic phase in hafnium oxide. This finding confirms experimental results for lanthanum and gadolinium showing the highest remanent polarization values of all hafnia-based ferroelectric films until now. However

Silicon-doped hafnium oxide anti-ferroelectric thin films

Silicon doped hafnium oxide was the material used in the original report of ferroelectricity in hafnia in 2011. Since then, it has been subject of many further publications including the

Structural and Electrical Comparison of Si and Zr Doped

The microstructure of ferroelectric hafnium oxide plays a vital role for its application, e.g., non-volatile memories. In this study, transmission Kikuchi diffraction and scanning transmission electron microscopy STEM techniques are used to compare the crystallographic phase and orientation of Si and Zr doped HfO2 thin films as well as integrated in a 22 nm fully-depleted silicon-on-insulator

Hafnium Oxide Based Ferroelectric Materials — NaMLab

Hafnium Oxide Based Ferroelectric Materials Fig. 1: Remanent polarization values for ~10 nm thick Si, Al, Gd, and La doped HfO 2 films with different dopant content. During the last two years the main focus in the project was on a detailed understanding of the ferroelectric properties in thin doped HfO 2 layers.

US20060270147A1 Hafnium titanium oxide films Google

US20060270147A1 US11/140,643 US14064305A US2006270147A1 US 20060270147 A1 US20060270147 A1 US 20060270147A1 US 14064305 A US14064305 A US 14064305A US 2006270147 A1 US2006270147 A1 US 2006270147A1 Authority US United States Prior art keywords hafnium forming titanium oxide oxide film method Prior art date 2005-05-27 Legal status (The legal

An ultrathin integrated nanoelectromechanical transducer

Oct 07, 2019· A nano-mechanical resonator with 10nm hafnium-zirconium oxide ferroelectric transducer. In 2018 IEEE International Electron Devices Meeting (IEDM) 4–6 (IEEE, 2019). 22.

Electrical properties of yttrium-doped hafnium-zirconium

May 04, 2020· Ferroelectric yttrium-doped hafnium-zirconium dioxide (Y-HZO) thin films were fabricated by solution process on Pt/Ti/SiO 2 /Si substrates. Both metal–ferroelectric–metal (MFM) structures with Pt top electrode and metal–ferroelectric–semiconductor (MFS) structures with indium tin oxide (ITO) top electrode were fabricated and characterized.

Hafnium Oxide Doped Mesostructured Silica Films Supplit

Hafnium oxide doped silica films with ordered mesostructures were produced with hafnium:silicon ratios between 1:60 and 1:6. A surfactant–hafnium alkoxide complex was synthesized and used as a template in a sol–gel dip‐coating process.

Exploring New Metal Electrodes for Ferroelectric Aluminum

Exploring New Metal Electrodes for Ferroelectric Aluminum-Doped Hafnium Oxide Abstract: In this paper, we explore new metal electrodes for ferroelectric capacitors based on Al-doped HfO 2 . We find that Ti/Pd, Ti/Au, and W top electrodes can induce much higher remanent polarization as compared to the traditional TiN top electrode.

Ferroelectricity in Doped Hafnium Oxide: Materials

Ferroelectricity in Doped Hafnium Oxide. Ferroelectricity in Doped Hafnium Oxide covers all aspects related to the structural and electrical properties of semiconductor devices, and the implementation of ferroelectric HfO 2 and ZrO 2-based thin films into these devices, including a comparison to standard ferroelectric materials.Ferroelectric and field-induced ferroelectric properties are